Datasheet Details
| Part number | 2SA1261-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.31 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1261-Z-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1261-Z.
| Part number | 2SA1261-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.31 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1261-Z-InchangeSemiconductor.pdf |
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·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1261-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A;
IB= -0.5A, L=1mH VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= -5.0A ;
IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped IC= -10A ;
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