Datasheet Details
| Part number | 2SA1263N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.91 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1263N_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1263N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.91 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1263N_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·plement to Type 2SC3180N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Remend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1263N isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1263N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1263N | SILICON POWER TRANSISTOR | SavantIC |
 |
2SA1263 | Silicon PNP Transistor | Toshiba Semiconductor |
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