2SA1265N Overview
Key Specifications
Description
With TO-3P(I) package - Complement to type 2SC3182 - 2SA1265 with short pin APPLICATIONS - Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-7A; IB=-0.7A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=5V IC=-1A ; VCE=-5V IE=0 ; VCB=10V ;f=1MHz 55 35 MIN -140 2SA1265N SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob TYP. MAX UNIT V -0.8 -1.0 -2.0 -1.5 -5 -5 160 V V µA µA 30 480 MHz pF hFE-1 Classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1265N Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N 4.
