The 2SA1265N is a POWER TRANSISTOR.
| Part Number | 2SA1265N Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182N ·Minimum Lot-to-Lot variations for robust device performance and reliable operati. T V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -140V; IE= 0 -5 μA IEBO Emitter Cutoff Current V. |
| Part Number | 2SA1265N Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fi. rent Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-7A; IB=-0.7A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=5V IC=-1A ; VCE=-5V IE=0 ; VCB=10V ;f=1MHz 55 35 MIN -140 2SA1265N SYMBOL V(B. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 15000 | 40+ : 1.6147 USD 90+ : 1.3248 USD 140+ : 1.2832 USD 190+ : 1.2416 USD |
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| IC Components Ltd. | 2300 | 1+ : 3.19 USD | View Offer |
| SHENGYU ELECTRONICS | 4616 | 1+ : 0.3063 USD 10+ : 0.3002 USD 100+ : 0.29 USD 1000+ : 0.28 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| A1265N | Inchange Semiconductor | 2SA1265N |
| A1265 | Toshiba | 2SA1265 |
| 2SA1265 | Inchange Semiconductor | Silicon PNP Power Transistor |
| 2SA1265 | Toshiba | Silicon PNP Transistor |