Datasheet Details
| Part number | 2SA1262 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.35 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1262_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1262.
| Part number | 2SA1262 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.35 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1262_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -2A ·plement to Type 2SC3179 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1262 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1262 | Silicon PNP Transistor | Sanken electric |
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2SA1262 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1261 | POWER TRANSISTOR |
| 2SA1261-Z | Silicon PNP Power Transistor |
| 2SA1263 | Silicon PNP Power Transistor |
| 2SA1263N | POWER TRANSISTOR |
| 2SA1264 | Silicon PNP Power Transistor |
| 2SA1264N | POWER TRANSISTOR |
| 2SA1265 | Silicon PNP Power Transistor |
| 2SA1265N | POWER TRANSISTOR |
| 2SA1205 | POWER TRANSISTOR |
| 2SA1209 | POWER TRANSISTOR |