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2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1262 –60 –60 –6 –4 –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SA1262 –100max –100max –60min 40min –0.6max 15typ 90typ V MHz pF
12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–4V, IC=–1A IC=–2A, IB=–0.2A VCE=–12V, IE=0.2A VCB=–10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
16.0±0.7
V
8.8±0.2
a b
ø3.75±0.2
1.35
0.65 +0.2 -0.1 2.5 B C E 2.5 1.
2SA1262 Datasheet
