Datasheet Details
| Part number | 2SA1360 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.15 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1360_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1360.
| Part number | 2SA1360 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.15 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1360_InchangeSemiconductor.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Complement to Type 2SC3423 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -50 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 mA 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1360 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1360 | TRANSISTOR | Toshiba Semiconductor |
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2SA1360 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |
| 2SA1327 | POWER TRANSISTOR |
| 2SA1329 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |