2SA1360 datasheet by Inchange Semiconductor.
| Part number | 2SA1360 |
|---|---|
| Datasheet | 2SA1360_InchangeSemiconductor.pdf |
| File Size | 216.15 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·plement to Type 2SC3423 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1360 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1360 | TRANSISTOR | Toshiba Semiconductor |
 |
2SA1360 | SILICON POWER TRANSISTOR | SavantIC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |
| 2SA1327 | POWER TRANSISTOR |
| 2SA1329 | POWER TRANSISTOR |
| 2SA1332 | POWER TRANSISTOR |
| 2SA1333 | POWER TRANSISTOR |
