Datasheet Details
| Part number | 2SA957 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.68 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA957_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA957.
| Part number | 2SA957 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.68 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA957_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA957 | (2SA957 / 2SA958) Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA958 | POWER TRANSISTOR |
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| 2SA908 | POWER TRANSISTOR |
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| 2SA913 | POWER TRANSISTOR |
| 2SA913A | POWER TRANSISTOR |
| 2SA914 | POWER TRANSISTOR |
| 2SA940 | Silicon PNP Power Transistor |
| 2SA963 | POWER TRANSISTOR |