Datasheet Details
| Part number | 2SA959 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.09 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA959_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA959 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.09 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA959_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -65~200 ℃ 2SA959 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA959 | Silicon POwer Transistors | SavantIC |
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