2SAR573D Description
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SAR573D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -50 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -50 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA ICBO Collector Cutoff Current...