Datasheet Details
| Part number | 2SAR573D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.56 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SAR573D-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SAR573D.
| Part number | 2SAR573D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.56 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SAR573D-InchangeSemiconductor.pdf |
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·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) ·plementary NPN types:2SCR573D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -6 A 10 W 150 ℃ -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SAR573D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -50 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -50 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SAR573D | PNP -3.0A -50V Middle Power Transistor | Rohm |
| Part Number | Description |
|---|---|
| 2SAR572D | Silicon PNP Power Transistor |
| 2SAR574D | Silicon PNP Power Transistor |
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| 2SA1003 | Silicon PNP Power Transistor |
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| 2SA1008 | POWER TRANSISTOR |
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| 2SA1011 | POWER TRANSISTOR |
| 2SA1015 | Silicon PNP Power Transistors |