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2SAR574D - Silicon PNP Power Transistor

General Description

Suitable for middle power drivers Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) Complementary NPN types:2SCR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXI

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isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) ·Complementary NPN types:2SCR574D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SAR574D isc website：www.iscsemi.