2SAR572D datasheet by Inchange Semiconductor.
| Part number | 2SAR572D |
|---|---|
| Datasheet | 2SAR572D-InchangeSemiconductor.pdf |
| File Size | 177.90 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SAR572D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -30 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -30 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -100mA ICBO Collector Cutoff...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SAR572D | PNP -5.0A -30V Middle Power Transistor | Rohm |
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| 2SAR573D | Silicon PNP Power Transistor |
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| 2SAR586D | Silicon PNP Power Transistor |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |
| 2SA1015 | Silicon PNP Power Transistors |
