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2SB923 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High Collector Current:: IC= -20A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -10A ·plement to Type 2SD1239 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching of relay drivers, high- speed inverters, converters applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB923 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB923 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;

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