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2SB924 - Silicon PNP Power Transistor

General Description

Wide Safety Operation Area Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -12A Complement to Type 2SD1240 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high

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isc Silicon PNP Power Transistor 2SB924 DESCRIPTION ·Wide Safety Operation Area ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -40 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.