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2SC2518 - Power Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultra

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isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Low Collector Saturation Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.