2SC2707 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·plement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...