Datasheet Details
| Part number | 2SC3690 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.99 KB |
| Description | Power Transistor |
| Download | 2SC3690 Download (PDF) |
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| Part number | 2SC3690 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.99 KB |
| Description | Power Transistor |
| Download | 2SC3690 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 15 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3690 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.1A VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 3A;
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