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2SC3714 - Silicon NPN Transistor

General Description

High Switching Speed High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collect

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isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3714 isc website：www.iscsemi.