Datasheet Details
| Part number | 2SC3714 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.31 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC3714-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3714 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.31 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC3714-InchangeSemiconductor.pdf |
|
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·High Switching Speed ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3714 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
IB=2A VBE(sat) Base-Emitter Saturation Voltage IC= 10A;
IB=2A ICBO Collector Cutoff Current VCB= 500V;
| Part Number | Description |
|---|---|
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| 2SC3719 | Power Transistor |
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| 2SC3720 | Power Transistor |
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| 2SC3737 | Power Transistor |
| 2SC3738 | Silicon NPN Transistor |
| 2SC3754 | Silicon NPN Power Transistor |
| 2SC3783 | Silicon NPN Power Transistor |
| 2SC3789 | Silicon NPN Transistor |