| Part number | 2SC3719 |
|---|---|
| Datasheet | 2SC3719_InchangeSemiconductor.pdf |
| File Size | 210.93 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...
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