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2SC4228 - Silicon NPN RF Transistor

General Description

8.0GHz TYP.

Low Cre 0.3pF TYP., @VCB = 3 V, IE = 0, f = 1 MHz

7.5 dB TYP.

100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4228 DESCRIPTION ·High fT 8.0GHz TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz ·Low Cre 0.3pF TYP., @VCB = 3 V, IE = 0, f = 1 MHz ·High ︱S21e︱2 7.5 dB TYP. @VCE = 3 V, IC = 5 mA, f = 2 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 35 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.