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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4226
DESCRIPTION ·Low Collector Curren -IC= 0.1A ·Low Collector Power—Pc=0.1W
With SOT-323 Package
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for broadband low noise amplifier ;
wideband low noise amplifie
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
Pc
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
100
mA
100
mW
150
℃
Tstg
Storage Temperature Range
-65--150 ℃
isc website：www.iscsemi.
2SC4226 Datasheet
