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2SC4227 - Silicon NPN Transistor

General Description

Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz

︱S21e︱2 = 12 dB TYP.

100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise ampli

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4227 isc website：www.iscsemi.