Datasheet4U Logo Datasheet4U.com

2SC4227 Datasheet Silicon NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN RF Transistor.

General Description

·Low Noise NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·High Gain ︱S21e︱2 = 12 dB TYP.

@VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4227 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC4227 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V;

2SC4227 Distributor