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2SD1298 - Silicon NPN Transistor

General Description

High DC Current Gain : hFE= 200(Min.)@ IC= 6A, VCE= 2V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequen

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isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION ·High DC Current Gain : hFE= 200(Min.)@ IC= 6A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 20 A 100 W 3.