Datasheet Details
| Part number | 2SD1390 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.69 KB |
| Description | Power Transistor |
| Datasheet | 2SD1390_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1390 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.69 KB |
| Description | Power Transistor |
| Datasheet | 2SD1390_InchangeSemiconductor.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1390 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1390 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| 2SD1314 | Silicon NPN Transistor |
| 2SD1336 | Power Transistor |
| 2SD1338 | Silicon NPN Transistor |
| 2SD1340 | Silicon NPN Transistor |
| 2SD1342 | Silicon NPN Transistor |
| 2SD1345 | Power Transistor |
| 2SD1351 | Silicon NPN Power Transistors |
| 2SD1371 | Silicon NPN Transistor |
| 2SD1378 | Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |