Power Transistor
| Part number | 2SD1493 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.87 KB |
| Description | Power Transistor |
| Datasheet | 2SD1493_InchangeSemiconductor.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
| Part Number | Description |
|---|---|
| 2SD1494 | Power Transistor |
| 2SD1495 | Power Transistor |
| 2SD1440 | Power Transistor |
| 2SD1475 | Silicon NPN Transistor |
| 2SD1476 | Power Transistor |
| 2SD1485 | Silicon NPN Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
