| Part number | 2SD1495 |
|---|---|
| Datasheet | 2SD1495_InchangeSemiconductor.pdf |
| File Size | 210.96 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
See all Inchange Semiconductor datasheets
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|---|---|
| 2SD1493 | Power Transistor |
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| 2SD1476 | Power Transistor |
| 2SD1485 | Silicon NPN Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |
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| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
