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2SD1530 - Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Good Linearity of hFE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,power switching applications.