Download 2SD1530 Datasheet PDF
Inchange Semiconductor
2SD1530
DESCRIPTION - Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) - Good Linearity of h FE - High Speed Switching - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature 30 W ℃ Tstg Storage Temperature...