Download 2SD1533 Datasheet PDF
Inchange Semiconductor
2SD1533
DESCRIPTION - Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) - Wide Area of Safe Operation - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Current-peak Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.4 W ℃ Tstg Storage Temperature Range -55~150...