2SD1532
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
- High DC Current Gain
: h FE= 1000(Min) @ IC= 2A, VCE= 4V
- Fast Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
120 m A
℃
-65~150 ℃ isc website：.iscsemi....
