Datasheet4U Logo Datasheet4U.com

2SD1531 - Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) Good Linearity of hFE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF output amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1532 NPN Transistor INCHANGE
2SD1535 Silicon NPN Transistor Panasonic Semiconductor
2SD1535 NPN Transistor INCHANGE
2SD1535 SILICON POWER TRANSISTOR SavantIC
2SD1536M NPN Silicon Transistor ETC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1530 Power Transistor
2SD1533 Silicon NPN Transistor
2SD1500 Power Transistor
2SD1509 Silicon NPN Power Transistor
2SD1516 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 5 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1531 isc website：www.iscsemi.