Datasheet Details
| Part number | 2SD1544 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.50 KB |
| Description | Power Transistor |
| Datasheet | 2SD1544_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1544 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.50 KB |
| Description | Power Transistor |
| Datasheet | 2SD1544_InchangeSemiconductor.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1544 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| 2SD1543 | Power Transistor |
| 2SD1500 | Power Transistor |
| 2SD1509 | Silicon NPN Power Transistor |
| 2SD1516 | Silicon NPN Transistor |
| 2SD1517 | Power Transistor |
| 2SD1518 | Power Transistor |
| 2SD1525 | Silicon NPN Darlington Power Transistor |
| 2SD1528 | Silicon NPN Power Transistor |
| 2SD1530 | Power Transistor |
| 2SD1531 | Power Transistor |