2SD1778 Datasheet PDF - Inchange Semiconductor Power Transistor Specs

2SD1778 - Power Transistor

Datasheet Summary

Description

High Collector Current:: IC= 4A Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A Wide Area of Safe Operation Complement to Type 2SB1334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc

Datasheet Details

Part number	2SD1778
Manufacturer	Inchange Semiconductor
File Size	214.06 KB
Description	Power Transistor
Datasheet	2SD1778 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1778 isc website：www.iscsemi.

Published: Sep 22, 2009 |