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2SD1803 Datasheet To-126 Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Collector Current-IC= 5.0A ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A ·Good Linearity of hFE ·Complement to Type 2SB1203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high-speed inverters,converters, and other general high-current switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.0 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8.0 A 1.0 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1803 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A;

IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A;

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