| Part number | 2SD2524 |
|---|---|
| Datasheet | 2SD2524_InchangeSemiconductor.pdf |
| File Size | 214.02 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO...
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