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2SD2524 - Power Transistor

General Description

High Breakdown Voltage- ：VCBO= 1700V (Min) High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 20 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2524 isc website：www.