High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONSOutput Applications.
| Part number | 2SD2689 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.85 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD2689 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2SD2689LS | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| 2SD2686 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
| 2SD2686 | Silicon NPN Epitaxial Type Transistor | Toshiba |
| 2SD2687S | Transistors | Rohm |
| 2SD2688LS | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD2633 | Silicon NPN Power Transistor |
| 2SD2642 | Silicon NPN Darlington Power Transistor |
| 2SD2027 | Power Transistor |
| 2SD2033 | Silicon NPN Power Transistor |
| 2SD2094 | Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
