Datasheet4U Logo Datasheet4U.com

2SK3592L - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 57A@ TC=25℃.
  • Drain Source Voltage : VDSS= 150V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3592-01L N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK3592-01S N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK3592-01SJ N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK359 N-Channel MOSFET Hitachi Semiconductor
2SK3590-01 N-CHANNEL SILICON POWER MOSFET Fuji Electric

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK3592S N-Channel MOSFET Transistor
2SK3590-01 N-Channel MOSFET Transistor
2SK3594-01 N-Channel MOSFET Transistor
2SK3595-01MR N-Channel MOSFET Transistor
2SK3596L N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK3592L FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 57 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 270 W TJ Max.