2SK667 Description
·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK667 TC=25℃ unless otherwise specified SYMBOL...
2SK667 Key Features
- Drain Current -ID=8A@ TC=25℃ -Drain Source Voltage