Datasheet Details
| Part number | 3DA77 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.42 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DA77-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 3DA77 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 247.42 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DA77-InchangeSemiconductor.pdf |
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·High DC Current Gain : hFE= 10(MAX)@IC= 1.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in plementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 1 V IC Collector Current-Continuous 5.0 A PC Collector Power Dissipation@TC=75℃ 40 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W 3DA77 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=20mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=5A;
| Part Number | Description |
|---|---|
| 3DA752 | Silicon NPN Power Transistor |
| 3DA76 | Silicon NPN Power Transistor |
| 3DA882 | Silicon NPN Power Transistor |