3DD8B Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
3DD8B datasheet by Inchange Semiconductor.
| Part number | 3DD8B |
|---|---|
| Datasheet | 3DD8B-InchangeSemiconductor.pdf |
| File Size | 184.48 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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3DD880 | NPN Transistor | INCHANGE |
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3DD880X | NPN Transistor | INCHANGE |
View all Inchange Semiconductor datasheets
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|---|---|
| 3DD8A | Silicon NPN Power Transistor |
| 3DD8C | Silicon NPN Power Transistor |
| 3DD8D | Silicon NPN Power Transistor |
| 3DD8E | Silicon NPN Power Transistor |
| 3DD8F | Silicon NPN Power Transistor |
| 3DD101A | Silicon NPN Power Transistor |
| 3DD101B | Silicon NPN Power Transistor |
| 3DD102 | Silicon NPN Power Transistor |
| 3DD102A | Silicon NPN Power Transistor |
| 3DD102B | Silicon NPN Power Transistor |