3DD8E
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A
APPLICATIONS
- Designed for power amplifier, low speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range
15 A
100 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.0 ℃/W isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
