3DD8E Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
- Part: 3DD8E
- Manufacturer: Inchange Semiconductor (official site)
- Size: 184.54 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
3DD880 | NPN Transistor |
|
Inchange Semiconductor |
3DD880X | NPN Transistor |