Datasheet Details
| Part number | 3DD8D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.57 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 3DD8D Datasheet
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| Part number | 3DD8D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.57 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
3DD8D Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, low speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Vo
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