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3DD8D - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, low speed switching and regu

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications.
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