75N10 - N-Channel MOSFET Transistor

Inchange Semiconductor

Key Features

Drain Current ID= 75A@ TC=25℃.
Drain Source Voltage- : VDSS=100V(Min).
Fast Switching Speed.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

75N10 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	75N10
Manufacturer	Inchange Semiconductor
File Size	228.78 KB
Description	N-Channel MOSFET Transistor
Datasheet	75N10 Datasheet

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 75N10 ·FEATURES ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 75 A ID(puls) Pulse Drain Current 300 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.