75N10 Datasheet | Specifications & PDF Download

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitanc

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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247

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■ Features • 100V/52A RDS(ON) = 17.5mΩ (max.) @ VGS= 10V • Reliable and Rugged. • Lead free and green device available (RoHS compliant). ■ Application

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 m

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Swi

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Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitanc

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isc N-Channel MOSFET Transistor IXTP75N10P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 25mΩ ·Fully characterized avalanche voltage and c

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION MegaMOSTMFET N-Channel Enhancement Mode IXTC 75N10 VDSS = 100 V = 72 A ID25 RDS(on) = 20 mΩ Sym

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isc N-Channel MOSFET Transistor IXTC75N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS

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UNISONIC TECHNOLOGIES CO., LTD UT75N10H Preliminary 75A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT75N10H is a N-channel mode power MOSF

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V ID25 RDS

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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247

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MSAFA75N10C SANTA ANA DIVISION www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW DESCRIPTION New generation N-channel enh

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 m

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lo

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Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTH75N10L2 IXTT7

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Swi

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Description AP75N10FIPIT 100V N-Channel Enhancement Mode MOSFET The AP75N10F/P/T uses advanced trench technology to provide excellent RDS(ON), low g

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CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS(ON) = 15mΩ @VGS = 10V. Super high dense ce

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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