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BD951F - Silicon NPN Power Transistor

Download the BD951F datasheet PDF. This datasheet also covers the BD949F variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain- : hFE= 40(Min)@ IC= 500mA Complement to Type BD950F/952F/954F/956F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD949F-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Inchange Semiconductor

Part Number Description
BD950 Silicon PNP Power Transistor
BD950F Silicon PNP Power Transistor
BD952 Silicon PNP Power Transistor
BD952F Silicon PNP Power Transistor
BD953F Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD949F 60 BD951F 80 VCBO Collector-Base Voltage V BD953F 100 BD955F 120 BD949F 60 BD951F 80 VCEO Collector-Emitter Voltage V BD953F 100 BD955F 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERI