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Inchange Semiconductor
BD952
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) - DC Current Gain- : h FE= 40(Min)@ IC= -500m A - plement to Type BD951 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -5 Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -8 ℃ Tstg...