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BDS16 - Silicon NPN Power Transistor

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Part number BDS16
Manufacturer Inchange Semiconductor
File Size 210.32 KB
Description Silicon NPN Power Transistor
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High Voltage: VCEV= 120V(Min) Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8

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