| Part number | BDS16 |
|---|---|
| Datasheet | BDS16-InchangeSemiconductor.pdf |
| File Size | 210.32 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
VCEV= 120V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDS16 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | TT |
 |
BDS16 | NPN Transistor | Seme LAB |
|
BDS16SMD | NPN Transistor | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDS12 | Silicon NPN Power Transistor |
| BDS18 | Silicon PNP Power Transistor |
| BDS19 | Silicon PNP Power Transistor |
