BDS19
DESCRIPTION
- High Voltage: VCEV= -150V(Min)
- Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A
- High Reliablity
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-8
Base Current
-2
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
-65~200
UNIT V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
