BDS19 - Silicon PNP Power Transistor

Datasheet Summary

Description

High Voltage: VCEV= -150V(Min) Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose powe

Inchange Semiconductor

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Datasheet Details

Part number	BDS19
Manufacturer	Inchange Semiconductor
File Size	213.04 KB
Description	Silicon PNP Power Transistor
Datasheet	BDS19 Datasheet
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isc Silicon PNP Power Transistor BDS19 DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power.

Published: Nov 15, 2016 |