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BDT83 - Silicon NPN Power Transistor

Download the BDT83 datasheet PDF. This datasheet also covers the BDT81 variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain -hFE = 40(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 Complement to Type BDT82/84/86/88 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

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Note: The manufacturer provides a single datasheet file (BDT81_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT81 60 BDT83 80 VCBO Collector-Base Voltage V BDT85 100 BDT87 120 BDT81 60 VCEO Collector-Emitter Voltage BDT83 80 V BDT85 100 BDT87 120 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Curre