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BDT83F - Silicon NPN Power Transistor

Download the BDT83F datasheet PDF. This datasheet also covers the BDT81F variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain -hFE = 40(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F Complement to Type BDT82F/84F/86F/88F Minimum Lot-to-Lot variations for robust device performance and reliable opera

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Note: The manufacturer provides a single datasheet file (BDT81F_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number Description
BDT83 Silicon NPN Power Transistor
BDT81 Silicon NPN Power Transistor
BDT81F Silicon NPN Power Transistor
BDT82 Silicon PNP Power Transistor
BDT82F Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F/84F/86F/88F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT81F 60 BDT83F 80 VCBO Collector-Base Voltage BDT85F 100 BDT87F 120 BDT81F 60 VCEO Collector-Emitter Voltage BDT83F 80 BDT85F 100 BDT87F 120 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Curren