DC Current Gain -hFE = 40(Min)@ IC= 5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87
Complement to Type BDT82/84/86/88
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP
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isc Silicon NPN Power Transistors
BDT81/83/85/87
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87
·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81
60
BDT83
80
VCBO
Collector-Base Voltage
V
BDT85
100
BDT87
120
BDT81
60
VCEO
Collector-Emitter Voltage
BDT83
80
V
BDT85
100
BDT87
120
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Curre
BDT81 Datasheet
